 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SBM1040 10A LOW VF SCHOTTKY BARRIER RECTIFIER POWERMITEa3 Features * * * * * * * * Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Max Junction Temperature Rating Very Low Forward Voltage Drop Very Low Leakage Current For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 NEW PRODUCT A P 3 E G POWERMITEa3 Dim A B C Min 4.03 6.40 Max 4.09 6.61 .889 NOM 1.83 NOM 1.10 5.01 4.37 .71 .36 1.73 1.14 5.17 4.43 .77 .46 1.83 .178 NOM B 1 2 J H D E G H Mechanical Data * * * * * Case: POWERMITEa3, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 0.072 grams (approx.) Marking information: See sheet 3 D C PIN 1 PIN 2 M K C L PIN 3, BOTTOMSIDE HEAT SINK J K L M P .178 NOM Note: Pins 1 & 2 must be electrically connected at the printed circuit board. All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (see also Figure 4) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @TC = 88C Typical Thermal Resistance Junction to Soldering Point Operating Temperature Range Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM RqJS Tj TSTG @ TA = 25C unless otherwise specified Symbol V(BR)R VFM IRM Cj Min 40 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 0.45 3/4 0.47 0.1 12.5 700 Max 3/4 0.49 0.41 0.51 0.3 25 3/4 Unit V V mA pF Test Condition IR = 1mA IF = 8A, TS = 25C IF = 8A, TS = 125C IF = 10A, TS = 25C TS = 25C, VR = 35V TS = 100C, VR = 35V f = 1.0MHz, VR = 4.0V DC Value 40 28 10 150 2.5 -65 to +150 -65 to +150 Unit V V A A C/W C C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 1) Forward Voltage (Note 1) Peak Reverse Current (Note 1) Junction Capacitance Notes: 1. Short duration test pulse used to minimize self-heating effect. DS30255 Rev. F-2 1 of 3 SBM1040 100 IR, INSTANTANEOUS REVERSE CURRENT (mA) IF, INSTANTANEOUS FORWARD CURRENT (A) 1000 TA = +150C NEW PRODUCT 10 TA = +150C 100 1 TA = +25C 10 TA = +100C 0.1 1 0.01 TA = +75C TA = +75C 0.001 0.1 TA = +25C 0.0001 0 100 200 300 400 500 600 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 1 Typical Forward Characteristics 10,000 0.01 0 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 12.5 Cj, JUNCTION CAPACITANCE (pF) f = 1MHz IF, DC FORWARD CURRENT (A) 10.0 Note 1 7.5 Note 2 5.0 Note 3 1000 2.5 100 0 5 10 15 20 25 30 35 40 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 4 DC Forward Current Derating VR, REVERSE VOLTAGE (V) Fig. 3 Typical Junction Capacitance vs. Reverse Voltage Notes: 1. TA = TSOLDERING POINT, RqJS = 2.5C/W, RqSA = 0C/W. 2. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RqJA in range of 15-30C/W. 3. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 60-75C/W. DS30255 Rev. F-2 2 of 3 SBM1040 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 8 7 6 1 5 4 3 2 1 0 0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 5 Forward Power Dissipation 2 dc Tj = 150C NEW PRODUCT Notes: 1. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RqJA in range of 15-30C/W. 2. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 60-75C/W. Ordering Information Device SBM1040-13 Notes: (Note 3) Packaging POWERMITEa3 Shipping 5000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information SBM1040 YYWW SBM1040 = Product type marking code = Manufacturers' code marking YYWW = Date code marking YY = Last two digits of year ex: 02 for 2002 WW = Week code 01 to 52 POWERMITE is a registered trademark of MicroSemi Corporation. DS30255 Rev. F-2 3 of 3 SBM1040 |
Price & Availability of SBM1040
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |